STW26NM60N Detailed explanation of pin function specifications and circuit principle instructions

The "STW26NM60N" is a power MOSFET manufactured by STMicroelectronics. The model specifically refers to a N-channel MOSFET used in high-voltage applications. Below is a comprehensive breakdown of the pin functions, the packaging information, and detailed FAQs.

Packaging Information for STW26NM60N

The STW26NM60N typically comes in the TO-220 package. This package has three leads (pins) for connecting to a circuit.

Pin Function and Detailed Description:

Here is the pinout and function description of the STW26NM60N in the TO-220 package:

Pin Number Pin Name Pin Function Description Pin 1 Gate (G) This is the gate terminal, which controls the switching of the MOSFET. A voltage applied to this pin controls whether the MOSFET is on (conducting) or off (non-conducting). The gate needs to be positively charged relative to the source to turn on the MOSFET. Pin 2 Drain (D) This is the drain terminal, where current flows out of the MOSFET. The drain is typically connected to the load in the circuit. The current flows from the drain to the source when the MOSFET is in the conducting state. Pin 3 Source (S) This is the source terminal. It serves as the reference point for the gate and drain voltages and is usually connected to ground or a negative voltage in circuits.

Detailed Pin Functionality for STW26NM60N:

Gate (Pin 1): The gate controls the conduction of the MOSFET. It is driven by a voltage signal, and when the voltage on the gate exceeds a threshold relative to the source, the MOSFET starts conducting between the drain and source terminals. A higher gate voltage makes the MOSFET switch faster. It is a high-impedance pin, so very little current flows into it. Drain (Pin 2): The drain is the terminal where the output current flows from the MOSFET. The drain is typically connected to the load in a circuit, and its current depends on the switching characteristics controlled by the gate. The MOSFET allows current to flow from the drain to the source when it is on. Source (Pin 3): The source terminal is typically connected to ground or to a negative voltage rail. The source provides the current flow entry point for the MOSFET. The voltage difference between the gate and source determines whether the MOSFET is on or off.

Circuit Principle of the STW26NM60N:

N-channel MOSFET: It is a semiconductor device that uses a n-type (electron-rich) material for the channel. When a positive voltage is applied to the gate, the MOSFET conducts between the drain and source, allowing current to pass through the device. On-State: The MOSFET is "on" when the voltage between the gate and source exceeds the threshold voltage (Vgs(th)). This creates a conductive channel between the drain and source. Off-State: When the gate-source voltage is below the threshold, no current flows between the drain and source, effectively turning the MOSFET off.

FAQs about the STW26NM60N:

Q: What is the maximum drain-to-source voltage of the STW26NM60N? A: The maximum drain-to-source voltage (Vds) of the STW26NM60N is 600V.

Q: What is the maximum continuous drain current? A: The maximum continuous drain current is 26A, assuming proper thermal management.

Q: What is the gate threshold voltage for the STW26NM60N? A: The gate threshold voltage (Vgs(th)) is between 2V and 4V.

Q: Can the STW26NM60N be used in a switching power supply circuit? A: Yes, it is widely used in power supplies for switching due to its high voltage and current handling capabilities.

Q: What is the typical Rds(on) of the STW26NM60N? A: The typical Rds(on) is around 0.9 Ω when Vgs = 10V.

Q: Can the STW26NM60N be used for high-frequency switching applications? A: No, it is more suitable for low-to-medium frequency switching due to its relatively high capacitance and switching losses.

Q: What type of applications can use the STW26NM60N? A: It is commonly used in power inverters, motor drives, and other high-voltage switching applications.

Q: What is the maximum power dissipation of the STW26NM60N? A: The maximum power dissipation is typically 130W, depending on the ambient temperature and thermal management.

Q: What is the maximum junction temperature of the STW26NM60N? A: The maximum junction temperature is 150°C.

Q: What is the recommended gate drive voltage for the STW26NM60N? A: The recommended gate drive voltage is 10V to ensure fully enhanced conduction.

Q: Is the STW26NM60N capable of handling short circuit conditions? A: No, the STW26NM60N is not designed to handle short-circuit conditions and should not be used in circuits where this is a possibility without additional protection.

Q: How should the gate capacitance of the STW26NM60N be considered in high-speed switching circuits? A: The gate capacitance (Cgs, Cgd) should be taken into account in high-speed switching circuits, as it can influence switching speed and power losses.

Q: What type of package does the STW26NM60N come in? A: The STW26NM60N comes in the TO-220 package, which is designed for efficient heat dissipation.

Q: Is the STW26NM60N a logic-level MOSFET? A: No, the STW26NM60N is not a logic-level MOSFET. It requires a higher gate voltage to fully turn on compared to a logic-level MOSFET.

Q: Can the STW26NM60N be used for inductive load switching? A: Yes, but external components such as diodes for flyback protection may be needed when switching inductive loads.

Q: What is the source-to-drain capacitance of the STW26NM60N? A: The typical source-to-drain capacitance (Cds) is around 150pF.

Q: How do I protect the gate of the STW26NM60N in a circuit? A: You can protect the gate by using a gate resistor to limit inrush current and a zener diode for voltage clamping.

Q: What is the effect of temperature on the STW26NM60N's performance? A: As the temperature increases, the MOSFET's threshold voltage decreases, and Rds(on) increases, which can affect the efficiency of the circuit.

Q: Can the STW26NM60N be paralleled with other MOSFETs ? A: Yes, it can be paralleled with other MOSFETs of the same type for current sharing, but proper thermal management and gate drive synchronization are required.

Q: Is the STW26NM60N RoHS compliant? A: Yes, the STW26NM60N is RoHS compliant.

This completes the detailed specifications and FAQ guide for the STW26NM60N MOSFET from STMicroelectronics.